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PDF FC808 Data sheet ( Hoja de datos )
| Número de pieza | FC808 | |
| Descripción | High-Speed Switching Composite Diode Cathode Common | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number :EN4338A
FC808
Silicon Epitaxial Plannar Type
High-Speed Switching Composite Diode
(Cathode Common)
Features
· Composite type with 4 diodes contained in the CP
package currently in use, saving the mounting space
greatly.
· Fast switching speed.
Package Dimensions
unit:mm
1250A
[FC808]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO*
IFM*
P*
Tj
Tstg
10ms*
Note) *:Unit rating. The total rating is 150% of the unit rating.
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF IF=10mA
IF=100mA
IR VR=50V
VR=80V
C VR=0V, f=1MHz
trr IF=10mA, VR=6V, RL=5Ω, Irr=0.1Irp
Note) The specifications shown above are for each individual diode.
· Marking:808
Reverse Recovery Time Test Circuit
Electrical Connection
1:Anode
2:Anode
3:Anode
4:Cathode
5:Anode
SANYO:CP5
Ratings
85
80
2
100
300
200
150
–55 to +150
Unit
V
V
A
mA
mA
mW
˚C
˚C
Ratings
Unit
min typ max
0.72 1.0 V
0.92 1.2 V
0.1 µA
0.5 µA
4.0 7.0 pF
5.0 ns
1:Anode
2:Anode
3:Anode
4:Cathode
5:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/O3196GI/82093YH (KOTO) X-7219 No.4338-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FC808.PDF ] | |
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