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PDF FC802 Data sheet ( Hoja de datos )
| Número de pieza | FC802 | |
| Descripción | Composite Diode for High-Speed Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number :EN3108B
FC802
Silicon Epitaxal Planar Diode
Composite Diode
for High-Speed Switching Applications
Features
· Composite type with 4 diodes cintained in the CP
package currently in use, resulting in the greatly
improved circuit board using efficiency.
· The FC802 is formed with two chips, each being
equivalent to the DCB015, placed in one package.
· Fast switching speed.
Package Dimensions
unit:mm
1233A
[FC802]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO
IFM
Tj
Tstg
1µs
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Intertermimal Capacitance
Reverse Recovery Time
VF IF=10mA
IF=50mA
IF=100mA
IR VR=50V
C VR=0V, f=1MHz
trr IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
Note) The specifications shown above are for each individual diode.
· Marking:802
Reverse Recovery Time Test Circuit
Electrical Connection
1:Anode
2:Anode
3:Cathode
4:Anode
5:Anode
6:Cathode
SANYO:CP6
Ratings
75
50
4
100
300
150
–50 to +150
Unit
V
V
A
mA
mA
˚C
˚C
Ratings
min typ max
Unit
0.72 1.0 V
0.85 1.0 V
0.92 1.2 V
100 nA
4.0 7.0 pF
5.0 ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/52595GI (KOTO) 169MO, TS 84995 No.3108-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FC802.PDF ] | |
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