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PDF FC13 Data sheet ( Hoja de datos )
| Número de pieza | FC13 | |
| Descripción | Low-Frequency General-Purpose Amp/ Differential Amp/ Analog Switch Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN4336
FC13
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp,
Differential Amp, Analog Switch Applications
Features
· Composite type with 2 FETs contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC13 is formed with two chips, being equivalent
to the 2SK303, placed in one package.
· Excellent in thermal equilibrium and pair capability
and especially suited for differential amp.
Package Dimensions
unit:mm
2095A
[FC13]
Electrical Connection
1:Source1
2:Drain1
3:Gate2
4:Source2
5:Drain2
6:Gate1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
PT
Tj
Tstg
1unit
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
G-D Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
G-S Voltage Drop
Drain Current
Drain Current Ratio
Forward Transfer Admittance
Forward Transfer Admittance Ratio
Input Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
V(BR)DGD
IGSS
VGS(off)
∆VGS
IDSS
| Yfs |
Ciss
Crss
RDS(on)
IG=–10µA, VDS=0
VGS=–20V, VDS=0
VDS=10V, ID=1µA
VGS(small/large), VDS=10V, ID=1mA
VDS=10V, VGS=0
VDS=10V, IDSS(small/large)
VDS=10V, VGS=0, f=1kHz
VDS=10V, | Yfs | (small/large)
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
VDS=10mV, VGS=0
The specifications shown above are for each individual transistor. Marking:13
Note*:The FC13 is classified by FET1 IDSS as follows :
IDSS rank:D,E
1.2 D 3.0
2.5 E 6.0
SANYO:CP6
Ratings
30
–30
10
10
200
300
150
–55 to +150
Unit
V
V
mA
mA
mW
mW
˚C
˚C
Ratings
min typ
–30
–0.3 –0.9
1.2*
0.9
3.0 5.0
0.9
5.0
0.9
250
max
–1.0
–2.5
50
6.0*
Unit
V
nA
V
mV
mA
mS
pF
pF
Ω
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/53094TH (KOYO) X-7245 No.4336-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FC13.PDF ] | |
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