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PDF FBR806 Data sheet ( Hoja de datos )
| Número de pieza | FBR806 | |
| Descripción | FAST RECOVERY BRIDGE RECTIFIERS | |
| Fabricantes | EIC discrete Semiconductors | |
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Hay una vista previa y un enlace de descarga de FBR806 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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FBR800 - FBR810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
FAST RECOVERY
BRIDGE RECTIFIERS
BR10
φ 0.158 (4.00)
0.142 (3.60)
0.290 (7.36)
0.210 (5.33)
0.520 (13.20)
0.480 (12.20)
AC
0.77 (19.56)
0.73 (18.54)
AC
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
0.75 (19.1)
Min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL FBR FBR FBR FBR FBR FBR FBR UNITS
800 801 802 804 806 808 810
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 50 °C
IF(AV)
8.0 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
200 Amps.
160 A2S
Maximum Forward Voltage drop per Diode at IF = 4.0 Amps.
VF
1.3 Volts
Maximum DC Reverse Current
Ta = 25 °C
IR
10 µA
at Rated DC Blocking Voltage
Ta = 100 °C
I R(H)
200 µA
Maximum Reverse Recovery Time (Note 1)
Trr
150
250 500
ns
Typical Thermal Resistance per diode (Note 2)
RθJC
2.5 °C/W
Operating Junction Temperature Range
TJ
- 50 to + 150
°C
Storage Temperature Range
T STG
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
UPDATE : APRIL 21, 1998
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FBR806.PDF ] | |
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