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PDF FMC7G30US60 Data sheet ( Hoja de datos )
| Número de pieza | FMC7G30US60 | |
| Descripción | Compact & Complex Module | |
| Fabricantes | Fairchild Semiconductor | |
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FMC7G30US60
Compact & Complex Module
October 2001
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A
• High input impedance
• Built in brake and 3 phase rectifier circuit
• Fast & soft anti-parallel FWD
Package Code : 21PM-BA
P P1
GU
GV GW
Applications
• AC & DC motor controls
• General purpose inverters
• Robotics
• Servo controls
R
B EU EV EW
S
U VW
T
GB
N
E
-GU -GV -GW
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Inverter
&
Brake
Converter
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
VRRM
IO
IFSM
I2t
TJ
Common
TSTG
VISO
Mounting Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
@ TC = 25°C
Diode Continuous Forward Current @ TC = 100°C
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
@ TC = 25°C
@ TC = 100°C
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
@ AC 1minute
Mounting part Screw
@ M4
FMC7G30US60
600
± 20
30
60
30
60
125
10
1200
30
300
369
-40 to +150
-40 to +125
2500
1.25
Units
V
V
A
A
A
A
W
us
V
A
A
A2s
°C
°C
V
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation
FMC7G30US60 Rev. A3
1 page  
3500
3000
2500
Cies
Common Emitter
V = 0V, f = 1MHz
GE
TC = 25℃
2000
1500
Coes
1000
500
Cres
0
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC GE
I = 30A
C
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Toff
Tf
100
1
Tf
10
Gate Resistance, RG [Ω ]
100
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
100
Ton
Tr
10
15
30 45
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
60
1000
Common Emitter
V = 300V, V = ± 15V
CC GE
IC = 30A
T = 25℃ ━━
C
TC = 125℃ ------
100
Ton
Tr
10
1
10
Gate Resistance, RG [Ω ]
100
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 300V, V = ± 15V
CC GE
I = 30A
C
T = 25℃ ━━
C
T = 125℃ ------
C
1000
Eon
Eoff
Eoff
100
1
10
Gate Resistance, RG [Ω]
100
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 7Ω
TC = 25℃ ━━
T = 125℃ ------
C
Toff
Tf
Toff
100 Tf
15 30 45 60
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMC7G30US60 Rev. A3
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FMC7G30US60.PDF ] | |
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