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PDF FMB150 Data sheet ( Hoja de datos )
| Número de pieza | FMB150 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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FMB150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI FMB150 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 16 A
VCBO
60 V
VCEO
25 V
VCES
60 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
230 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.1 OC/W
PACKAGE STYLE .500 4L FLG
A
FULL R
C
B
.112x45°
L
Ø.125 NOM.
E
H
DF
G
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
.255 / 6.48
D .720 / 18.28
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
.110 / 2.79
J .150 / 3.81
.175 / 4.45
K .280 / 7.11
L .980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10588
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCER
IC = 100 mA
RBE = 10 Ω
BVCEO
IC = 100 mA
BVEBO
IE = 20 mA
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
60
55
25
4.0
20 150
UNITS
V
V
V
V
---
COB VCB = 28 V
f = 1.0 MHz
140 pF
PG
VCC = 28 V
POUT = 150 W
ηC
f = 108 MHz
9.0
65
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet FMB150.PDF ] | |
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