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PDF FM2G400US60 Data sheet ( Hoja de datos )
| Número de pieza | FM2G400US60 | |
| Descripción | Molding Type Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FM2G400US60
Molding Type Module
General Description
Fairchild Insulated Gate Bipolar Transistor (IGBT) Power
Module provides low conduction and switching losses as
well as short circuit ruggedness. It’s designed for the
applications such as motor control, Uninterruped Power
Supply (UPS) and general inverters where short-circuit
ruggedness is a required feature.
Features
• UL Certified No.E209204
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 400A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
September 2001
IGBT
Package Code : 7PM-EA
E1/C2
C1 E2
G1 E1
G2 E2
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M6
Mounting Screw : M6
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
FM2G400US60
600
± 20
400
800
400
800
10
1560
-40 to +150
-40 to +125
2500
2.5
2.5
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
©2001 Fairchild Semiconductor Corporation
FM2G400US60 Rev. A
1 page  
100000
C ies
10000
C oes
C res
1000
1
C om m on E m itte r
Vge = 0V
f = 1M hz
Tc = 25℃
10 30
C O LLE C T O R -E M IT T E R V O LT A G E V CE [V ]
Fig 7. Capacitance Characteristics
1
t
d(o ff)
tf
0.1 C om m on E m itter
Vcc = 300V
Vge = ± 15V
Ic = 400A
0 .0 5
1
: Tc = 25℃
: Tc = 125℃
10
G AT E R E SIS TA N C E R G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1
td(on)
0.1
tr
C om m on Em itter
Vcc = 300V
Vge = ± 15V
R g = 1.6Ω
0 .0 1
30
100
: Tc = 25℃
: Tc = 125℃
400
CO LLEC TO R C UR R EN T Ic [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
C o m m o n E m itte r
Vcc = 300V
Vge = ± 15V
Ic = 4 0 0 A
td (o n)
1
tr
0 .3
1
: Tc = 25℃
: Tc = 125℃
10
G A T E R E S IS T A N C E R g [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
100
Vcc = 300V
Ic = 400 A
80
Esw
60
Eon
40
E off
20
0
0 5 10 15 20
G A T E - E M IT T E R R E S IS T A N C E R g [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
C om m on E m itter
Vcc = 300V
Vge = ± 15V
R g = 1.6Ω
1
t d (o ff)
0 .1
tf
0 .0 5
40
: Tc = 25℃
: Tc = 125℃
100
C O LLE C T O R C U R R E N T Ic [A ]
400
Fig 12. Turn-Off Characteristics vs.
Collector Current
FM2G400US60 Rev. A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FM2G400US60.PDF ] | |
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