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PDF FM1608-120-P Data sheet ( Hoja de datos )
| Número de pieza | FM1608-120-P | |
| Descripción | 64Kb Bytewide FRAM Memory | |
| Fabricantes | ETC | |
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FM1608
64Kb Bytewide FRAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
• Organized as 8,192 x 8 bits
• High endurance 10 Billion (1010) read/writes
• 10 year data retention at 85° C
• NoDelay™ write
• Advanced high-reliability ferroelectric process
Superior to BBSRAM Modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots
Description
The FM1608 is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 10 years while
eliminating the reliability concerns, functional
disadvantages and system design complexities of
battery-backed SRAM. Its fast write and high write
endurance make it superior to other types of
nonvolatile memory.
In-system operation of the FM1608 is very similar to
other RAM based devices. Memory read- and write-
cycles require equal times. The FRAM memory,
however, is nonvolatile due to its unique ferroelectric
memory process. Unlike BBSRAM, the FM1608 is a
truly monolithic nonvolatile memory. It provides the
same functional benefits of a fast write without the
serious disadvantages associated with modules and
batteries or hybrid memory solutions.
These capabilities make the FM1608 ideal for
nonvolatile memory applications requiring frequent or
rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs, while the DIP
package facilitates simple design retrofits. The
FM1608 offers guaranteed operation over an
industrial temperature range of -40°C to +85°C.
SRAM & EEPROM Compatible
• JEDEC 8Kx8 SRAM & EEPROM pinout
• 120 ns access time
• 180 ns cycle time
• Equal access & cycle time for reads and writes
Low Power Operation
• 15 mA active current
• 20 µA standby current
Industry Standard Configuration
• Industrial temperature -40° C to +85° C
• 28-pin SOP or DIP
Pin Configuration
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VDD
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Ordering Information
FM1608-120-P 120 ns access, 28-pin plastic DIP
FM1608-120-S 120 ns access, 28-pin SOP
This data sheet contains design specifications for product development.
These specifications may change in any manner without notice
28 July 2000
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058
www.ramtron.com
1/12
1 page  
Ramtron
Figure 3. Row and Column Organization
Applications
As the first truly nonvolatile RAM, the FM1608 fits
into many diverse applications. Clearly, its monolithic
nature and high performance make it superior to
battery-backed SRAM in most every application. This
applications guide is intended to facilitate the
transition from BBSRAM to FRAM. It is divided into
two parts. First is a treatment of the advantages of
FRAM memory compared with battery-backed
SRAM. Second is a design guide, which highlights
the simple design considerations that should be
reviewed in both retrofit and new design situations.
FRAM Advantages
Although battery-backed SRAM is a mature and
established solution, it has numerous weaknesses.
These stem, directly or indirectly from the presence of
the battery. FRAM uses an inherently nonvolatile
storage mechanism that requires no battery. It
therefore eliminates these weaknesses. The major
considerations in upgrading to FRAM are as follows.
Construction Issues
1. Cost
The cost of both the component and the
manufacturing overhead of battery-backed SRAM is
high. FRAM, with its monolithic construction is
inherently a lower cost solution. In addition, there is
no ‘built-in’ rework step required for battery
attachment when using surface mount parts.
Therefore assembly is streamlined and more cost
effective. In the case of DIP battery-backed modules,
the user is constrained to through-hole assembly
techniques and a board wash using no water.
2. Humidity
A typical battery-backed SRAM module is qualified at
60º C, 90% Rh, no bias, and no pressure. This is
because the multi-component assemblies are
vulnerable to moisture, not to mention dirt. FRAM is
28 July 2000
FM1608
qualified using HAST – highly accelerated stress test.
This requires 120º C at 85% Rh, 24.4 psia at 5.5V bias.
3. System reliability
Data integrity must be in question when using a
battery-backed SRAM. They are inherently
vulnerable to shock and vibration. If the battery
contact comes loose, data will be lost. In addition a
negative voltage, even a momentary undershoot, on
any pin of a battery-backed SRAM can cause data
loss. The negative voltage causes current to be drawn
directly from the battery. These momentary short
circuits can greatly weaken a battery and reduce its
capacity over time. In general, there is no way to
monitor the lost battery capacity. Should an
undershoot occur in a battery backed system during a
power down, data can be lost immediately.
4. Space
Certain disadvantages of battery-backed, such as
susceptibility to shock, can be reduced by using the
old fashioned DIP module. However, this alternative
takes up board space, add height, and dictates
through-hole assembly. FRAM offers a true surface-
mount solution that uses 25% of the board space.
No multi-piece assemblies no connectors, and no
modules. A real nonvolatile RAM is finally
available!
Direct Battery Issues
5. Field maintenance
Batteries, no matter how mature, are a built-in
maintenance problem. They eventually must be
replaced. Despite long life projections, it is impossible
to know if any individual battery will last considering
all of the factors that can degrade them.
6. Environmental
Lithium batteries are widely regarded as an
environmental problem. They are a potential fire
hazard and proper disposal can be a burden. In
addition, shipping of lithium batteries may be
restricted.
7. Style!
Backing up an SRAM with a battery is an old-
fashioned approach. In many cases, such modules are
the only through-hole component in sight. FRAM is
the latest memory technology and it is changing the
way systems are designed.
FRAM is nonvolatile and writes fast -- no battery
required!
5/12
5 Page 
Ramtron
28-pin SOP JEDEC MS -013
Index
Area
Pin 1
B
e
D
FM1608
EH
A
A1
h
.10 mm
.004 in.
α
45°
L
C
Selected Dimensions
For complete dimensions and notes, refer to JEDEC MS-013
Controlling dimensions is in millimeters. Conversions to inches are
not exact.
Symbol
A
A1
B
C
D
E
e
H
h
L
α
Dim
mm
in.
mm
in.
mm
in.
mm
in.
mm
in.
mm
in.
mm
in.
mm
in.
mm
in.
mm
in.
Min
2.35
0.0926
0.10
0.004
0.33
0.013
0.23
0.0091
17.70
0.6969
7.40
0.2914
10.00
0.394
0.25
0.010
.40
0.016
0°
Nom.
1.27 BSC
0.050 BSC
Max
2.65
0.1043
0.30
0.0118
0.51
0.020
0.32
0.0125
18.10
0.7125
7.60
0.2992
10.65
0.419
0.75
0.029
1.27
0.050
8°
28 July 2000
11/12
11 Page | ||
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| PDF Descargar | [ Datasheet FM1608-120-P.PDF ] | |
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