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PDF FGL60N170D Data sheet ( Hoja de datos )
| Número de pieza | FGL60N170D | |
| Descripción | Electrical Characteristics of IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGL60N170D
October 2001
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
FGL60N170D is designed for the Induction Heating
applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
C
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
G
E
FGL60N170D
1700
± 25
60
30
180
15
150
200
80
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.625
0.83
25
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
FGL60N170D Rev. B
1 page  
16
Common Emitter
14
R
L
=
10Ω,
V
CC
=
600V
T = 25oC
C
12
10
8
6
4
2
0
0 25 50 75 100
Gate Charge, Qg [nC]
125
150
Fig 13. Gate Charge Characteristics
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
10
50µs
100µs
1ms
DC Operation
1
Single Nonrepetitive
Pulse Tc = 25oC
0.1 Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10 100 1000
Collector - Emitter Voltage, VCE [V]
Fig 14. Turn off SOA Characteristics
10
1
0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
single pulse
1E-3
1E-5
1E-4
1E-3
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
0.01 0.1 1 10
Rectangulasr Pulse Duration [sec]
Fig 15. Transient Thermal Impedance of IGBT
1.0
IECF = 60A
0.9 T = 25oC
C
0.8
0.7
0.6 trr
0.5
0.4
0.3
0.2
0.1
0.0
0
Irr
40
80 120
di/dt [A/µs]
160
Fig 16. Typical Trr vs. di/dt
100
90
80
70
60
50
40
30
20
10
0
200
di/dt = 20A/µs
1.2
T = 25oC
C
I
rr
0.8
0.4
trr
0.0
10 20 30 40 50
IECF [A]
14
12
10
8
6
4
2
0
60
Fig 17. Typical Trr vs. Forward Current
©2001 Fairchild Semiconductor Corporation
100
10 TC = 125oC
1
0.1
0
12
Forward Voltage, VF [V]
3
Fig 18. Typical Forward Voltage Drop vs.
Forward Current
FGL60N170D Rev. B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGL60N170D.PDF ] | |
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