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PDF FGH50N3 Data sheet ( Hoja de datos )
| Número de pieza | FGH50N3 | |
| Descripción | 300V/ PT N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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July 2002
FGH50N3
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for medium frequency switch mode power
supplies.
Formerly Developmental Type TA49485
Features
• Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max
• Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ
• SCWT (@ TJ = 125°C). . . . . . . . . . . . . . . . . > 8µs
• 300V Switching SOA Capability
• Positive VCE(SAT) Temperature Coefficient above
50A
Package
TO-247
E
C
G
COLLECTOR
(FLANGE)
Symbol
C
G
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES
IC25
IC110
Collector to Emitter Breakdown Voltage
Collector Current Continuous, TC = 25°C
Collector Current Continuous, TC = 110°C
300 V
75 A
75 A
ICM
VGES
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
240 A
±20 V
VGEM
SSOA
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at TJ = 150°C, Figure 2
±30
150A at 300V
V
EAS
EARV
Single Pulse Avalanche Energy, ICE = 30A, L = 1.78mH, VDD = 50V
Single Pulse Reverse Avalanche Energy, IEC = 30A, L = 1.78mH, VDD = 50V
800
800
mJ
mJ
PD Power Dissipation Total TC = 25°C
463 W
Power Dissipation Derating TC > 25°C
3.7 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
tSC Short Circuit Withstand Time (Note 2)
8 µs
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 180V, TJ = 125°C, VGE = 12Vdc, RG = 5Ω
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
1 page  
Typical Performance Curves TJ = 25°C unless otherwise noted (Continued)
250
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
200
150
100
TJ = 25oC
50
0
5
TJ = 125oC
67
TJ = -55oC
89
10
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
11
16
IG(REF) = 1mA, RL = 5Ω, TJ = 25oC
14
12
VCE = 300V
10
8
6
VCE = 200V
4
VCE = 100V
2
0
0 25 50 75 100 125 150 175 200
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
1.2
RG = 5Ω, L = 100µH, VCE = 180V, VGE = 15V
ETOTAL = EON2 + EOFF
1.0
0.8
ICE = 60A
40
TJ = 125oC, L = 100µH, VCE = 180V, VGE = 15V
ETOTAL = EON2 + EOFF
10
0.6
ICE = 30A
0.4
ICE = 15A
0.2
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 15. Total Switching Loss vs Case
Temperature
10
FREQUENCY = 1MHz
CIES
1.0 COES
CRES
0.1
0.05
0
10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
ICE = 60A
1
ICE = 30A
ICE = 15A
0.1
1
10 100 1000
RG, GATE RESISTANCE (Ω)
Figure 16. Total Switching Loss vs Gate
Resistance
3.5
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs, TJ = 25oC
3.0
ICE = 60A
2.5
ICE = 30A
2.0
ICE = 15A
1.5
1.0
6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGH50N3.PDF ] | |
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