|
|
PDF FGB20N6S2 Data sheet ( Hoja de datos )
| Número de pieza | FGB20N6S2 | |
| Descripción | 600V/ SMPS II Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FGB20N6S2 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
August 2003
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49330.
Features
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
G
G
COLLECTOR
(Back-Metal)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
COLLECTOR
(Flange)
E
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
28 A
IC110
Collector Current Continuous, TC = 110°C
13 A
ICM Collector Current Pulsed (Note 1)
40 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
35 at 600V
A
EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100 mJ
EARV
Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100 mJ
PD Power Dissipation Total TC = 25°C
125 W
Power Dissipation Derating TC > 25°C
1.0 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
1 page  
Typical Performance Curves (Continued)
120
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
100
80
TJ = 25oC
60
40
20 TJ = 125oC
TJ = -55oC
0
46
8 10 12 14
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
16
0.8
RG = 25Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
0.6
ICE = 14A
0.4
ICE = 7A
0.2
ICE = 3A
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 15. Total Switching Loss vs Case
Temperature
1.2
FREQUENCY = 1MHz
1.0
0.8
0.6 CIES
0.4
0.2 COES
CRES
0.0
0 10 20 30 40 50 60 70 80 90
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
Figure 17. Capacitance vs Collector to Emitter
Voltage
16
IG(REF) = 1mA, RL = 42.6Ω, TJ = 25oC
14
12
VCE = 600V
10
8
6
VCE = 400V
4
VCE = 200V
2
0
0 5 10 15 20 25
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
30
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
35
1
ICE = 14A
ICE = 7A
ICE = 3A
0.1
0.05
1
10 100 1000
RG, GATE RESISTANCE (Ω)
Figure 16. Total Switching Loss vs Gate
Resistance
3.6
DUTY CYCLE < 0.5%
3.4 PULSE DURATION = 250µs, TJ = 25oC
3.2
ICE = 14A
3.0
2.8 ICE = 7A
2.6 ICE = 3A
2.4
2.2
2.0
5 6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGB20N6S2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FGB20N6S2 | 600V/ SMPS II Series N-Channel IGBT | Fairchild Semiconductor |
| FGB20N6S2D | 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |