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PDF FGA25N120AND Data sheet ( Hoja de datos )
| Número de pieza | FGA25N120AND | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA25N120AND
IGBT
General Description
Employing NPT technology, Fairchild’s AND series of
IGBTs provides low conduction and switching losses. The
AND series offers an solution for application such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 235ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGA25N120AND
1200
± 20
40
25
75
25
150
310
125
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.4
2.0
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA25N120AND Rev. A
1 page  
Common Emitter
V =±
GE
15V,
R
G
=
10Ω
10
T = 25℃
C
T = 125℃
C
1
Eon
Eoff
0.1
10
20 30 40
Collector Current, IC [A]
50
Fig 13. Switching Loss vs. Collector Current
16
Common Emitter
14
R = 24Ω
L
T = 25℃
C
12
10
8
600V
400V
6 Vcc = 200V
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Gate Charge, Qg [nC]
Fig 14. Gate Charge Characteristics
100 Ic MAX (Pulsed)
Ic MAX (Continuous)
10
50µs
100µs
1ms
DC Operation
1
Single Nonrepetitive
0.1 Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10
100
Collector - Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
100
10
Safe Operating Area
V = 15V, T = 125℃
1 GE C
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
PPddmm
tt11
tt22
DDuuttyyffaaccttoorrDD==tt11//tt22
PPeeaakkTTjj==PPddmm××ZZththjcjc++TTCC
1 10
©2003 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
FGA25N120AND Rev. A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGA25N120AND.PDF ] | |
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