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Número de pieza | 3N191 | |
Descripción | P-CHANNEL DUAL MOSFET ENHANCEMENT MODE | |
Fabricantes | Linear Integrated Systems | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 3N191 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! 3N190 3N191
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT
LOW TRANSFER CAPACITANCE
ABSOLUTE MAXIMUM RATINGS1
IGSS ≤ ±10pA
Crss ≤ 1.0pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation One Side
300mW
Continuous Power Dissipation Both Sides
525mW
Maximum Current
Drain to Source2
50mA
Maximum Voltages
Drain to Gate2
Drain to Source2
Transient Gate to Source2,3
30V
30V
±125V
Gate to Gate
±80V
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
TO-78
BOTTOM VIEW
C
4
G1 3
5 G2
S1 2
6 S2
D1 1
7 D2
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
g gfs1 fs2
VGS1-2
∆VGS1 − 2
∆T
∆VGS1 − 2
∆T
Forward Transconductance Ratio
Gate to Source Threshold Voltage
Differential
Gate to Source Threshold Voltage
Differential with Temperature4
Gate to Source Threshold Voltage
Differential with Temperature4
0.85
1.0 VDS = -15V, ID = -500µA, f = 1kHz
100 mV VDS = -15V, ID = -500µA
100
µV °C
100
VDS = -15V, ID = -500µA
TS = -55 TO +25 °C
VDS = -15V, ID = -500µA
TS = +25 TO +125 °C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BVDSS
BVSDS
VGS
VGS(th)
IGSSR
IGSSF
IDSS
ISDS
ID(on)
Drain to Source Breakdown Voltage
Source to Drain Breakdown Voltage
Gate to Source Voltage
Gate to Source Threshold Voltage
Reverse Gate Leakage Current
Forward Gate Leakage Current
Drain Leakage Current "Off"
Source to Drain Leakage Current "Off"
Drain Current "On"
-40
-40
-3.0
-2.0
-2.0
-5.0
-6.5
-5.0
-5.0
10
-10
-200
-400
-30.0
V
pA
mA
ID = -10µA
IS = -10µA, VBD = 0V
VDS = -15V, ID = -500µA
VDS = VGS, ID = -10µA
VDS = -15V, ID = -500µA
VGS = 40V
VGS = -40V
VDS = -15V
VSD = -15V, VDB = 0V
VDS = -15V, VGS = -10V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 3N191.PDF ] |
Número de pieza | Descripción | Fabricantes |
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