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PDF 2SK3417 Data sheet ( Hoja de datos )

Número de pieza 2SK3417
Descripción Switching Regulator Applications
Fabricantes Toshiba Semiconductor 
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2SK3417
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3417
Switching Regulator Applications
· Reverse-recovery time: trr = 60 ns (typ.)
· Built-in high-speed flywheel diode
· Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)
· High forward transfer admittance: ïYfsï = 4.0 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)
· Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
Rating
500
500
±30
5
20
50
180
5
5
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.5
83.3
°C/W
°C/W
Note 1: Please use devise on condition that the channel temperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 W,
IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
1 2002-08-12

1 page




2SK3417 pdf
2SK3417
rth - tw
10
1
Duty = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.57°C/W
0.001
10 m
100 m
1m
10 m
100 m
1
10
Pulse width tw (S)
Safe operating area
100
EAS – Tch
200
30 ID max (pulsed) *
10
ID max (continuous) *
3
DC operation
Tc = 25°C
1
100 ms *
1 ms *
0.3
0.1
0.03
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
160
120
80
40
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
-15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 W
VDD = 90 V, L = 12.2 mH
Wave form
ΕAS
=
1
2
×L
×I2
×
ççèæ
BVDSS
BVDSS - VDD
÷÷øö
5 2002-08-12

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