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PDF 2SK2372 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2372 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)
• Low Ciss Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings
15.7 MAX. 3.2 ± 0.2
4
1 23
4.7 MAX.
1.5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2371/2SK2372) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±25
A
Drain Current (pulse)*
ID(pulse)
±100
A
Total Power Dissipation (TC = 25 °C) PT1 160 W
Total Power Dissipation (Ta = 25 °C) PT2 3.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 ~ +150 °C
Single Avalanche Current**
IAS 25 A
Single Avalanche Energy**
EAS 446 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2.2 ± 0.2
5.45
1.0 ± 0.2
5.45
MP-88
0.6 ± 0.1 2.8 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Gate
Body
Diode
Source
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.0
0.5
ID = 25 A
13 A
0
–50
0
50 100 150
Tch - Channel Temperature - (C)
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
1 000
100
Coss
Crss
10
VGS = 0 V
f = 1 MHz
1.0
0.1 1.0 10 100 1000
VDS - Drain to Source Voltage - (V)
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
600
500
400
300
200
100
0.1
di/dt = 50 A/µs
VGS = 0
1.0 10 100
IF - Forward Current - (A)
2SK2371/2SK2372
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1.0
0.1
VGS = 0 V
0.01
0
Pulsed
0.5 1.0 1.5
VSD - Source to Drain Voltage - (V)
1000
100
SWITCHING CHARACTERISTICS
td (off)
tr
tf
td (on)
10
1.0
0.1
VDD = 150 V
VGS = 10 V
Rin = 10 Ω
1.0 10 100
ID - Drain Current - (A)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500 20
400 VDD = 400 V
250 V
125 V
18
16
14
300 12
VGS 10
200 8
6
100
VDS
4
2
0
0 20 40 60 80 100 120
Qg - Gate Charge (nC)
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2372.PDF ] | |
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