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PDF D1013UK Datasheet ( Hoja de datos )

Número de pieza D1013UK
Descripción METAL GATE RF SILICON FET
Fabricantes Seme LAB 
Logotipo Seme LAB Logotipo

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D1013UK Hoja de datos, Descripción, Manual
MECHANICAL DATA
C
2
1
A
3
F
(2 pls)
H
J
N
(typ)
B
D
(2 pls)
MI
PIN 1
PIN 3
SOURCE
GATE
E KG
DP
PIN 2 DRAIN
DIM mm
A 16.51
B 6.35
C 45°
D 3.30
E 18.92
F 1.52
G 2.16
H 14.22
I 1.52
J 6.35
K 0.13
M 5.08
N 1.27 x 45°
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5° 45° 5°
0.13 0.130 0.005
0.08 0.745 0.003
0.13 0.060 0.005
0.13 0.085 0.005
0.08 0.560 0.003
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.200 0.020
0.13 0.050 x 45° 0.005
TetraFET
D1013UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
50W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00

1 page

D1013UK pdf
D1013UK
G a te -B ia s
10K
1K 1nF
T1
1n
100nF
100K
1 -1 0 p F
T2
1 -1 0 p F
20pF
T3
D 1013U K
1nF
L1
T4
10
L2
T5
1 -1 0 p F
+28V
100uF 100nF 1nF
3 .3 K
10pF
T6 T7
1n
1 -1 0 p F
500MHz Test Fixture
Substrate 0.8 mm FR4, Er = 2.2
All microstrip lines W = 2.2mm
T1
T2
T3 10mm
T4
T5 30mm
T6 6mm
T7 12.5mm
L1 5.5 turns 20swg enamelled copper wire 7mm i.d.
L2 1.5 turns 24swg enamelled copper wire on Siemens B62152A7X 2 hole
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00

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