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PDF DA28F016XS-15 Data sheet ( Hoja de datos )

Número de pieza DA28F016XS-15
Descripción 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
Fabricantes Intel Corporation 
Logotipo Intel Corporation Logotipo



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E
28F016XS
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
SYNCHRONOUS FLASH MEMORY
n Effective Zero Wait-State Performance
up to 33 MHz
Synchronous Pipelined Reads
n SmartVoltage Technology
User-Selectable 3.3V or 5V VCC
User-Selectable 5V or 12V VPP
n 0.33 MB/sec Write Transfer Rate
n Configurable x8 or x16 Operation
n 56-Lead TSOP and SSOP Type I
Package
n Backwards-Compatible with 28F008SA
Command-Set
n 2 µA Typical Deep Power-Down
n 1 mA Typical Active ICC Current in
Static Mode
n 16 Separately-Erasable/Lockable
128-Kbyte Blocks
n 1 Million Erase Cycles per Block
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining very high read performance with the intrinsic
nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of
shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for
improved system performance. The innovative capabilities of the 28F016XS enable the design of direct-
execute code and mass storage data/file flash memory systems.
The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution
available today. Its synchronous pipelined read interface, flexible VCC and VPP voltages, extended cycling,
fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a
highly flexible memory component suitable for resident flash component arrays on the system board or
SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface
with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read
performance up to 33 MHz. The 28F016XS’s dual read voltage allows the same component to operate at
either 3.3V or 5.0V VCC. Programming voltage at 5V VPP minimizes external circuitry in minimal-chip, space
critical designs, while the 12.0V VPP option maximizes program/erase performance. Its high read performance
combined with flexible block locking enable both storage and execution of operating systems/application
software and fast access to large data tables. The 28F016XS is manufactured on Intel’s 0.6 µm ETOX IV
process technology.
November 1996
Order Number: 290532-004

1 page




DA28F016XS-15 pdf
E
28F016XS FLASH MEMORY
Number
-004
REVISION HISTORY (Continued)
Description
Require all VCC Tolerences to be within 5% of Operational Voltage
IPPES Is Pushed to 200 µA from 50 Max
ICCD Is Pushed to 10 µA from 5 Max
Updated tAVAV at 3.3V
Updated tELEH at 3.3V and 5.0V
5

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DA28F016XS-15 arduino
E
28F016XS FLASH MEMORY
28F016SA/SV
CE0 #
A12
A13
A14
A15
3/5#
CE0 #
A12
A13
A14
A15
3/5#
CE1 #
NC
A20
A 19
A 18
A17
A16
VCC
GND
DQ6
DQ14
DQ7
DQ15
CE1 #
NC
A20
A 19
A 18
A17
A16
VCC
GND
DQ6
DQ14
DQ7
DQ15
RY/BY# RY/BY#
OE#
OE#
W E#
WE#
W P#
DQ13
DQ5
DQ12
DQ4
VCC
WP#
DQ13
DQ5
DQ12
DQ4
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
DA28F016XS
56-LEAD SSOP
STANDARD PINOUT
16 mm x 23.7 mm
TOP VIEW
28F016SA/SV
56 VPP
55 RP#
54 A11
53 A10
52 A9
51 A1
50 A2
49 A3
48 A4
47 A5
46 A6
45 A7
VPP
RP#
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
44 GND
GND
43 A8
42 VCC
A8
VCC
41 DQ9
DQ9
40 DQ1
DQ 1
39 DQ 8
DQ 8
38 DQ0
DQ0
37 A0
A0
36
BYTE#
BYTE#
35 ADV#
34 CLK
NC
NC
33 DQ2
32 DQ10
31 DQ3
30 DQ11
29 GND
DQ2
DQ10
DQ 3
DQ11
GND
XS_SSOP
Figure 3. 28F016XS 56-Lead SSOP Pinout Configuration Shows Compatibility with the 28F016SA/SV,
Allowing for Easy Performance Upgrades from Existing 16-Mbit Designs
4/15/97 9:41 AM 9053204.DOC
INTEL CONFIDENTIAL
(until publication date)
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