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PDF D45VH10 Data sheet ( Hoja de datos )
| Número de pieza | D45VH10 | |
| Descripción | COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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D44VH10 (NPN),
D45VH10 (PNP)
Complementary Silicon
Power Transistors
These complementary silicon power transistors are designed for
high−speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well−suited for drivers
for high power switching circuits.
• Fast Switching −
tf = 90 ns (Max)
• Key Parameters Specified @ 100_C
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Complementary Pairs Simplify Circuit Designs
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current −Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ−Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
VCEO
VCEV
VEB
IC
ICM
PD
80 Vdc
100 Vdc
7.0 Vdc
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15 Adc
20
83 W
0.67 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
RqJC
RqJA
TL
1.5 _C/W
62.5 _C/W
275 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
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15 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
80 V, 83 W
MARKING
DIAGRAM
4
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A−09
TO−220AB
D4xVH10
AYWWG
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
D44VH10
TO−220
50 Units/Rail
D44VH10G
TO−220
(Pb−Free)
50 Units/Rail
D45VH10
TO−220
50 Units/Rail
D45VH10G
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DataShee
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© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 4
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1
Publication Order Number:
D44VH/D
1 page  
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D44VH10 (NPN), D45VH10 (PNP)
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
et4U.com
Q
H
Z
B
4
1 23
F
T
−T−
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 −−−
Z −−− 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 −−−
−−− 2.04
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet D45VH10.PDF ] | |
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