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PDF D2230 Data sheet ( Hoja de datos )
| Número de pieza | D2230 | |
| Descripción | METAL GATE RF SILICON FET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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TetraFET
D2230UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
GOLD METALLISED
MULTI-PURPOSE SILICON
2 PL.
0.47
1.65
2 PL.
4
3.00
2 PL.
2.07
2 PL.
0.381
3
2
0.47
2 PL.
1
0.10
TYP.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
0.80
4 PL.
4.90 ± 0.15
0.3 R.
4 PL.
5
1.27
6
1.27
7
1.27
8
0.10 R.
TYP.
6.50 ±
0.15
0.10
TYP.
2.313
± 0.2
0.360
± 0.005
DMOS RF FET
5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
0.508 • SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
17.5W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
4A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Prelim. 2/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D2230.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| D2230 | METAL GATE RF SILICON FET | Seme LAB |
| D2230UK | METAL GATE RF SILICON FET | Seme LAB |
| D2231 | METAL GATE RF SILICON FET | Seme LAB |
| D2231UK | METAL GATE RF SILICON FET | Seme LAB |
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