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PDF DD60HB160 Data sheet ( Hoja de datos )

Número de pieza DD60HB160
Descripción DIODE MODULE
Fabricantes ETC 
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No Preview Available ! DD60HB160 Hoja de datos, Descripción, Manual

DIODE MODULE
DD(KD)60HB120/160
Power Diode Module DD60HB series are designed for various rectifier circuits.
DD60HB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage ratage up to,
1,600V is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102 M
93.5MAX
80
321
2- 6.5
~
16.5
+
23
23
3M5
Unit a
Maximum Ratings
Symbol
Item
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD60HB120
1200
1350
Ratings
Tj 25 unless otherwise specified
DD60HB160
1600
1700
Unit
V
V
Symbol
IF AV
IF (RMS)
IFSM
I2t
Tj
Tstg
VISO
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I2t
Junction Temperature
Storage Temperature
Isolation Breakdown Voltage R.M.S.
Mounting
Torque
Mounting M6
Terminal M5
Mass
Conditions
Single phase, half wave, 180 conduction, Tc 111
Single phase, half wave, 180 conduction, Tc 111
1 2 cycle, 50/60HZ, peak value, non-repetitive
Value for one cycle of surge current
A.C.1minute
Recommended Value 2.5-3.9 25-40
Recommended Value 1.5-2.5 15-25
Electrical Characteristics
Symbol
Item
IRRM Repetitive Peak Reverse Current, max.
VFM Forward Voltage Drop, max.
Rth j-c Thermal Impedance, max.
Conditions
at VDRM, single phase, half wave. Tj 150
Foward current 180A Tj 25 Inst. measurement
Junction to case
Ratings
60
95
1100/1200
6000
40 to 150
40 to 125
2500
4.7 48)
2.7 28)
170
Unit
A
A
A
A2S
V
Nm
fB
g
Ratings
20
1.35
0.50
Unit
mA
V
/W
SanRex®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]

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