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PDF DCB010 Data sheet ( Hoja de datos )

Número de pieza DCB010
Descripción Very High-Speed Switching Diode
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! DCB010 Hoja de datos, Descripción, Manual

Ordering number : EN1895B
DCB010
Silicon Epitaxial Planar Type (Cathode Common)
DCB010
Very High-Speed Switching Diode
Features
Ideally suited for use in hybrid ICs because
of very small-sized package.
Fast switching speed.
Small interterminal capacitance.
Electrical Connection
Cathode
3
1
Anode
2 (Top view)
Anode
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Current (1µs)
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IFMg
IO
IOg
IFSM
IFSMg
P
Tj
Tstg
g : Total value
Package Dimensions
unit : mm
1169A
[DCB010]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
1 : Anode
2 : Anode
3 : Cathode
SANYO : CP
Conditions
Ratings
85
80
300
450
100
150
4
6
200
125
--55 to +125
Unit
V
V
mA
mA
mA
mA
A
A
mW
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12000 GI IM / 2279TA, TS No.1895-1/3

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