(PDF) DBES105A Datasheet - Flip-Chip Dual Diode

Número de pieza	DBES105A
Descripción	Flip-Chip Dual Diode
Fabricantes	United Monolithic Semiconductors
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No Preview Available ! DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high performance mixer applications. Main Features ■ High cut-off frequencies : 3THz ■ High breakdown voltage : < -5V @ 20µA ■ Good ideality factor : 1.2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Parameter Wu Gate Width Fco Cut-off frequency n Ideality factor BVak Anode-cathode break-down voltage Typ Unit 5 µm 3 THz 1.2 < -5 V ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSDBES1051067 -08-Mar-01 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 1 page

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PDF DBES105A Data sheet ( Hoja de datos )