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PDF DB6 Data sheet ( Hoja de datos )
| Número de pieza | DB6 | |
| Descripción | SILICON BIDIRECTIONAL DIAC | |
| Fabricantes | Shanghai Lunsure Electronic Tech | |
| Logotipo |  |
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CE
CHENYI ELECTRONICS
FEATURES
The three layer,two terminal, axial lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current,The breakover
symmetry is within three volts(DB3,DC34,DB4)or four volts(DB6).These diacs are
intended for use in thyrisitors phase control, circuits for lamp dimming,universal
motor speed control, and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate
in conjunction with Triacs and SCR's
DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Parameters
Pc
ITRM
TSTG/TJ
Power Dissipation on Printed
Circuit(L=10mm)
TA=50
Repetitive Peak in-state
tp=10u s
Current
F=100Hz
Storage and Operating Junction Temperature
ELECTRCAL CHARACTERISTICS
Value
DB3 DC34 DB4
Units
DB6
150 mW
2.0 2.0 2.0 1.6
-40 to +125/-40 to 110
A
Symbols
Parameters
VBO
Breakover Voltage(Note 2)
Test Conditions
Value
DB3 DC34 DB4
c=22nF(Note 2) Min 28 30 35
See diagram1
Typ 32 34 40
Max 36 38 45
|+VBO|-
|-VBO|
Breakover Voltage Symmetry
c=22nF(Note 2)
See diagram1
Max
3
| V|
Vo
IBO
tr
Dynamic Breakover
Voltage(Note 1)
Output Voltage(Note 1)
Breakover Current(Note 1)
Rise Time(Note 1)
I=(IBO to IF=10mA)
Min
See diagram1
See diagram2
Min
c=22nF(Note 2) Max
See Diagram 3 Typ
5
5
100
1.5
VB=0.5 VBO max
IB Leakage Current(Note 1)
Max
see diagram 1
10
Notes: 1. Electrical characteristics applicable in both forward and reverse directions.
2. Connected in parallel with the devices.
DB6
56
60
70
4
10
Units
V
V
V
V
A
S
A
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DB6.PDF ] | |
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