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PDF DB3 Data sheet ( Hoja de datos )
| Número de pieza | DB3 | |
| Descripción | BIDIRECTIONAL TRIGGER DIODE | |
| Fabricantes | Shanghai Sunrise Electronics | |
| Logotipo |  |
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 1. Bidirectional Diac ( PDF )  Hay una vista previa y un enlace de descarga de DB3 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
DB3
BIDIRECTIONAL
TRIGGER DIODE
BREAKOVER VOLTAGE: 32V
POWER: 150mW
TECHNICAL
SPECIFICATION
FEATURES
• VBO: 26 ~ 36V version
• Low breakover current
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Mounting position: Any
DO - 35
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
.060 (1.5)
.090 (2.3) DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Rating at 25oC ambient temperature unless otherwise specified)
RATINGS
TEST
CONDITION
SYMBOL
Breakover Voltage *
C=22nF **
VBO
Breakover Voltage Symmetry
C=22nF **
|+ VBO|-|-VBO|
Dynamic Breakover Voltage *
(Note 1)
|∆V ± |
Output Voltage *
VO
Breakover Current *
C=22nF **
IBO
Rise Time *
tr
Leakage Current *
VR=0.5VBO
IB
Power Dissipation on Printed Circuit
Ta=65oC
Pd
Repetitive Peak on-state Current
tp=20µS
f=100Hz
ITRM
Thermal
Junction to Ambient
Resistances Junction to Lead
Rθ(ja)
Rθ(jl)
Operating Junction and Storage
Temperature Range
TJ,TSTG
* : Electrical characteristic applicable in forward and reverse directions.
** : Connected in parallel with the devices.
Note:
1. IF from IBO to 10mA.
Min.
26
-3
5
5
VALUE
Typ.
32
1.5
Max.
36
3
100
10
150
UNITS
V
V
V
V
µA
µS
µA
mW
2A
400 oC/W
150
-40 125 oC
http://www.sse-diode.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet DB3.PDF ] | |
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