PDF DB1012S Data sheet ( Hoja de datos )

Número de pieza	DB1012S
Descripción	SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
Fabricantes	Rectron Semiconductor
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No Preview Available ! RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE 1200 Volts CURRENT 1.0 Ampere DB1012S FEATURES * Surge overload rating - 50 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device * Polarity symbols molded on body * Mounting position: Any * Weight: 1.0 gram MECHANICAL DATA: * Epoxy : UL flammability classification 94V-0 .042 (1.1) .038 (1.0) DB-S .310 (7.9) .290 (7.4) .255 (6.5) .245 (6.2) .013 (.330) .003 (.076) .410 (10.4) .360 (9.4) .009 (9.4) .060 (1.524) .040 (1.016) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .335 (8.51) .320 (8.13) .205 (5.2) .195 (5.0) .135 (3.4) .115 (2.9) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current at TA = 40oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM TJ,TSTG DB1012S 1200 840 1200 1.0 50 -55 to + 150 UNITS Volts Volts Volts Amps Amps 0C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per Bridge Element at 1.0A DC Maximum Reverse Current at rated DC Blocking Voltage per element @TA = 25oC @TA = 125oC NOTE: Suffix “-s” Surface Mount for Dip Bridge. SYMBOL VF IR DB1012S 1.1 5.0 0.5 UNITS Volts uAmps mAmps 1998-8 1 page

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