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PDF DAP222 Data sheet ( Hoja de datos )
| Número de pieza | DAP222 | |
| Descripción | SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DAP222 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by DAP222/D
Common Anode Silicon
Dual Switching Diode
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra
high speed switching applications. This device is housed in the SOT–416/SC–90
package which is designed for low power surface mount applications, where board
space is at a premium.
• Fast trr
• Low CD
• Available in 8 mm Tape and Reel
DAP222
SOT–416/SC–90 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODE
SURFACE MOUNT
3
2
1
CASE 463–01, STYLE 4
SOT–416/SC–90
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
VR 80 Vdc
VRM 80 Vdc
IF 100 mAdc
IFM 300 mAdc
IFSM(1)
2.0
Adc
DEVICE MARKING
DAP222 = P9
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
PD
TJ
Tstg
150
150
– 55 ~ + 150
mW
°C
°C
Condition
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
1. t = 1 µS
2. trr Test Circuit on following page.
IR
VF
VR
CD
trr(2)
VR = 70 V
IF = 100 mA
IR = 100 µA
VR = 6.0 V, f = 1.0 MHz
IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR
ANODE
3
12
CATHODE
Min Max
— 0.1
— 1.2
80 —
— 3.5
— 4.0
Unit
µAdc
Vdc
Vdc
pF
ns
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
PACKAGE DIMENSIONS
DAP222
–A–
S
2
D 3 PL
0.20 (0.008) M B
3
1
G –B–
K 0.20 (0.008) A
STYLE 4:
J
PIN 1. CATHODE
C 2. CATHODE
3. ANODE
LH
CASE 463–01
ISSUE A
SOT–416/SC–90
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 0.70 0.80 0.028 0.031
B 1.40 1.80 0.055 0.071
C 0.60 0.90 0.024 0.035
D 0.15 0.30 0.006 0.012
G 1.00 BSC
0.039 BSC
H ––– 0.10 ––– 0.004
J 0.10 0.25 0.004 0.010
K 1.45 1.75 0.057 0.069
L 0.10 0.20 0.004 0.008
S 0.50 BSC
0.020 BSC
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DAP222.PDF ] | |
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