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PDF BAV70WT1 Data sheet ( Hoja de datos )
| Número de pieza | BAV70WT1 | |
| Descripción | Dual Switching Diodes | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Dual Switching Diodes
DEVICE MARKING
BAV70WT1 = A4
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient RθJA
Junction and Storage Temperature
TJ, Tstg
Max
70
200
500
Max
200
1.6
0.625
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
V(BR)
(VR = 70 Vdc)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF= IR=10 mAdc, RL= 100Ω, IR(REC)= 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
IR1
IR2
CD
VF
trr
VRF
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.
Min
70
—
—
—
—
—
—
—
—
—
BAV70WT1
3
1
2
CASE 419–04, STYLE 5
SOT–323 (SC–70)
ANODE
1
ANODE
2
3
CATHODE
Max
—
5.0
100
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
µAdc
nAdc
pF
mVdc
ns
V
BAV70WT1–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAV70WT1.PDF ] | |
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