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PDF BAV70 Data sheet ( Hoja de datos )
| Número de pieza | BAV70 | |
| Descripción | MONOLITHIC DUAL SWITCHING DIODE COMMON CATHODE | |
| Fabricantes | Zowie Technology Corporation | |
| Logotipo |  |
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 1. 100V, Switching Diode - NXP  Hay una vista previa y un enlace de descarga de BAV70 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Zowie Technology Corporation
Monolithic Dual Switching Diode
Common Cathode
3
BAV70
1
2
SOT-23
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM( surge )
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
CATHODE
3
Value
70
200
500
Max.
225
1.8
556
300
2.4
417
-55 to +150
DEVICE MARKING
BAV70=A4
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Reverse Breakdown Voltage
( IBR=100uAdc )
V(BR)
70
Forward Voltage
( IF=1.0 mAdc )
( IF=10 mAdc )
( IF=50 mAdc )
( IF=150 mAdc )
-
VF
-
-
-
Reverse Voltage Leakage Current
( VR=70 Vdc )
( VR=25 Vdc, TJ=150oC )
( VR=70 Vdc, TJ=150oC )
IR
-
-
-
Diode Capacitance
( VR=0, f=1.0MHZ )
CJ -
ANODE
1
2
ANODE
Unit
Vdc
mAdc
mAdc
Unit
mW
mW / oC
oC / W
mW
mW / oC
oC / W
oC
Max.
-
715
855
1000
1250
2.5
60
100
1.5
Unit
Vdc
mVdc
uAdc
pF
Reverse Recovery Time
( IFw=IRw=w10.DmAadtca, SVRh=e5e.0tV4dUc,.IcRo(RmEC)=1.0mAdc, RL=100 )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
trr - 6.0 nS
Zowie Technology Corporation
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAV70.PDF ] | |
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