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PDF BAT86 Data sheet ( Hoja de datos )
| Número de pieza | BAT86 | |
| Descripción | Schottky Diodes | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAT86 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NEW PRODUCT
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BAT86
Schottky Diodes
NEW PRODUCT
DO-35
max. ∅.079 (2.0)
Cathode
Mark
max. ∅.020 (0.52)
Dimensions in inches and (millimeters)
FEATURES
♦ For general purpose applications.
♦ This diode features low turn-on volt-
age. The devices are protected by a PN
junction guard ring against excessive volt-
age, such as electrostatic discharges.
♦ Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications.
♦ This diode is also available in the Mini-MELF case
with the type designation BAS86.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Min.
Max.
Continuous Reverse Voltage
Forward Continuous Current at Tamb = 25 °C
Repetitive Forward Current
at tp < 1 s, υ ≤ 0.5, Tamb = 25 °C
Power Dissipation at Tamb = 25 °C
Junction Temperature
VR
IF
IFRM
Ptot
Tj
–
–
–
–
–
50
2001)
5001)
2001)
125
Ambient Operating Temperature Range
Tamb
–65
+125
Storage Temperature Range
TS –65
+150
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
Unit
V
mA
mA
mW
°C
°C
°C
5/98
222
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAT86.PDF ] | |
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