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PDF BAT74S Data sheet ( Hoja de datos )
| Número de pieza | BAT74S | |
| Descripción | Dual Schottky barrier diode | |
| Fabricantes | NXP Semiconductors | |
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BAT74S
Dual Schottky barrier diode
22 November 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier dual diode with an integrated guard ring for stress protection.
Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
• Low forward voltage
• Low capacitance
• AEC-Q101 qualified
1.3 Applications
• Ultra high-speed switching
• Line termination
• Voltage clamping
• Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
IF forward current
VR reverse voltage
Per diode
VF forward voltage
IR reverse current
Conditions
IF = 100 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
VR = 25 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 30 V
- - 800 mV
- - 2 µA
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1 page  
NXP Semiconductors
BAT74S
Dual Schottky barrier diode
10
Cd
(pF)
8
006aac891
6
4
2
Fig. 4.
Tamb = 25 °C; f = 1 MHz
0
0
10 20 30
VR (V)
Diode capacitance as a function of reverse voltage; typical values
8. Test information
RS = 50 Ω
V = VR + IF × RS
(1) IR = 1 mA
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
mga881
VR
tr
10 %
tp
90 %
input signal
Fig. 5. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAT74S
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
© NXP B.V. 2012. All rights reserved
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