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PDF BAT54LT1 Data sheet ( Hoja de datos )

Número de pieza BAT54LT1
Descripción Schottky Barrier Diodes
Fabricantes ON Semiconductor 
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BAT54LT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
Low Forward Voltage – 0.35 Volts (Typ) @ IF = 10 mAdc
http://onsemi.com
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
3
CATHODE
1
ANODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
PF
30 Volts
200 mW
2.0 mW/°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
IF
200 Max
mA
TJ 125 Max °C
Tstg –55 to +150
°C
MARKING
DIAGRAM
3
3
JV3
1
2
(TO–236AB)
SOT–23
CASE 318
STYLE 8
1
2
ORDERING INFORMATION
Device
Package
Shipping
BAT54LT1
SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 6
Publication Order Number:
BAT54LT1/D

1 page




BAT54LT1 pdf
BAT54LT1
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
(TO–236AB)
SOT–23
PLASTIC PACKAGE
CASE 318–08
ISSUE AE
KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 8:
PIN 1.
2.
3.
ANODE
NO CONNECTION
CATHODE
http://onsemi.com
5

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