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PDF BAS40-06 Data sheet ( Hoja de datos )
| Número de pieza | BAS40-06 | |
| Descripción | Surface mount Schottky-Barrier Single-/ Double-Diodes | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAS40-06 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BAS40, BAS40-04, BAS40-05, BAS40-06
BAS40, BAS40-04, BAS40-05, BAS40-06
Surface Mount Schottky Barrier Single/Double Diodes
Schottky-Barrier Einzel-/Doppel-Dioden für die Oberflächenmontage
Version 2015-05-12
Power dissipation – Verlustleistung
0.4+0.1
-0.05
2.9 ±0.1
3
Type
Code
1
1.9±0.1
2
1.1+0.1
-0.2
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
310 mW
40 V
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
per diode / pro Diode
Power dissipation – Verlustleistung 1)
Max. average forward current (dc)
Dauergrenzstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
tp ≤ 1 s
Grenzwerte (TA = 25°C)
BAS40-series
Ptot 310 mW 2)
IFAV 200 mA 2)
IFRM 300 mA 2)
IFSM 0.6 A
VRRM
40 V
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
Forward voltage 3)
Durchlass-Spannung 3)
Leakage current
Sperrstrom
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
IF = 1 mA
IF = 10 mA
IF = 40 mA
VR = 30 V
VR = 40 V
Kennwerte (Tj = 25°C)
VF < 380 mV
VF < 500 mV
VF < 1.00 V
IR < 200 nA
IR < 10 µA
CT 5 pF
trr < 5 ns
RthA < 400 K/W 2)
1 Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAS40-06.PDF ] | |
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