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PDF BAS21 Data sheet ( Hoja de datos )

Número de pieza BAS21
Descripción General Purpose High Voltage Diode
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! BAS21 Hoja de datos, Descripción, Manual

BAS21
3
SOT-23
2
1
3
29
12
CONNECTION DIAGRAM
3
1 2 NC
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
250
200
600
700
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
BAS21
350
2.8
357
Units
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW /°C
°C/W
ã 1998 Fairchild Semiconductor Corporation

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