|
|
PDF BAS170WS Data sheet ( Hoja de datos )
| Número de pieza | BAS170WS | |
| Descripción | Small Signal Schottky Diode | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BAS170WS (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.vishay.com
BAS170WS
Vishay Semiconductors
Small Signal Schottky Diode
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Schottky diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
BAS170WS
BAS170WS-E3-08 or BAS170WS-E3-18
BAS170WS-HE3-08 or BAS170WS-HE3-18
INTERNAL
CONSTRUCTION
Single diode
TYPE MARKING
73
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation (1)
tp < 1 s
VRRM
IF
IFSM
Ptot
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
70
70
600
200
UNIT
V
mA
mA
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Operating temperature range
Top
Storage temperature range
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
650
125
- 55 to + 125
- 65 to + 150
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Reverse breakdown voltage
Leakage current
Forward voltage
Forward voltage (1)
Diode capacitance
Differential forward resistance
IR = 10 μA (pulsed)
VR = 50 V
VR = 70 V
IF = 1 mA
IF = 10 mA
IF = 15 mA
VR = 0 V, f = 1 MHz
IF = 5 mA, f = 10 kHz
V(BR)
IR
IR
VF
VF
VF
CD
rf
70
Note
(1) Pulse test; tp 300 μs
TYP.
375
705
880
1.5
34
MAX.
0.1
10
410
750
1000
2
UNIT
V
μA
μA
mV
mV
mV
pF
Rev. 1.9, 25-Feb-13
1 Document Number: 85653
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAS170WS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BAS170W | Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |  Siemens Semiconductor Group |
| BAS170W | Silicon Schottky Diode |  Infineon Technologies AG |
| BAS170W | Silicon Schottky Diode |  Infineon |
| BAS170WS | Small Signal Schottky Diode | Vishay Siliconix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |