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Número de pieza | BAS16WT1 | |
Descripción | Silicon Switching Diode | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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BAS16WT1
Preferred Device
Silicon Switching Diode
Features
• Pb−Free Package is Available
http://onsemi.com
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
VR
IR
IFM(surge)
75
200
500
V
mA
mA
Total Power Dissipation,
One Diode Loaded TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD 200 mW
1.6 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
RqJA
Max
625
Unit
°C/W
3
CATHODE
1
ANODE
MARKING
3 DIAGRAM
1
2
SC−70
CASE 419
STYLE 2
A6D
A6 = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS16WT1
SC−70 3000 / Tape & Reel
BAS16WT1G SC−70 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
June, 2005− Rev. 6
1
Publication Order Number:
BAS16WT1/D
1 page BAS16WT1
PACKAGE DIMENSIONS
A
L
3
S
1
B
2
D
G
0.05 (0.002)
H
C
SC−70 (SOT−323)
CASE 419−04
ISSUE L
NJ
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.032 0.040
D 0.012 0.016
G 0.047 0.055
H 0.000 0.004
J 0.004 0.010
K 0.017 REF
L 0.026 BSC
N 0.028 REF
S 0.079 0.095
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.80 1.00
0.30 0.40
1.20 1.40
0.00 0.10
0.10 0.25
0.425 REF
0.650 BSC
0.700 REF
2.00 2.40
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
0.9
0.035
1.9
0.075
0.7
0.028
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BAS16WT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
BAS16WT | Switching Diode | MCC |
BAS16WT1 | CASE 419-02/ STYLE 2 SC-70/SOT-323 | Motorola Inc |
BAS16WT1 | Silicon Switching Diode | ON Semiconductor |
BAS16WT1G | Silicon Switching Diode | ON Semiconductor |
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