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PDF BAS116LT1 Data sheet ( Hoja de datos )

Número de pieza BAS116LT1
Descripción Switching Diode
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BAS116LT1
Preferred Device
Switching Diode
This switching diode has the following features:
Low Leakage Current Applications
Medium Speed Switching Times
Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
75
200
500
Vdc
mAdc
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
3
CATHODE
1
ANODE
MARKING
DIAGRAM
JV M
SOT−23 (TO−236)
CASE 318
STYLE 8
JV = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BAS116LT1
SOT−23 3000 / Tape & Reel
BAS116LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 4
1
Publication Order Number:
Devicenumber/D

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