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PDF BAM80 Data sheet ( Hoja de datos )
| Número de pieza | BAM80 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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BAM80
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BAM80 is Designed for VHF
AM power amplifier Applications in the
range of 100 to 150 MHz.
FEATURES:
• Common Emitter
• PG = 6.0 dB at 20 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 8.5 A
VCES
60 V
VCEO
35 V
VEBO
4.0 V
PDISS
85 W
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 2.0 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
B
E
ØC
A
C
B
E
D
#8-32 UNC-2A
DIM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
E
HI
J
G
F
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 20 mA
BVEBO
IE = 5.0 mA
ICBO
ICES
VCB = 30 V
VCE = 30 V
TC = 125 OC
hFE VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
35
60
4.0
2.0
10
5.0 ---
UNITS
V
V
V
mA
mA
---
Ccb VCB = 28 V
f = 1.0 MHz
75 pF
PG
ηC
VSWR
VCE = 13.5 V
POUT =20 W
f = 150 MHz
6.0
30:1
65
dB
%
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BAM80.PDF ] | |
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