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PDF BA892V-02V-GS08 Data sheet ( Hoja de datos )

Número de pieza BA892V-02V-GS08
Descripción Band Switching Diodes
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! BA892V-02V-GS08 Hoja de datos, Descripción, Manual

VISHAY
BA892V-02V
Vishay Semiconductors
Band Switching Diodes
Mechanical Data
Case: Plastic case (SOD 523)
Weight: 1.5 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box
A
Description
The main purpose of the BA892V-02V is the Band
Switching. Biased with a DC forward current for sig-
nals at frequencies over 100 MHz up to 3 GHz this di-
ode behaves like a current controlled resistor and not
as a diode any more.
C
16863
Depending on the forward current the forward resis-
tance rf can be switched far below 1 , so that the
Switch is closed. To open the Switch, the BA892V-
02V has to be driven in the reverse mode where the
BA892V-02V behaves like a small capacitor with high
isolation. So typical applications for this Band Switch-
ing Diode are mobile and TV-applications.
Features
• Low forward resistance
• Small, space saving SOD523 package with low
series inductance
• Small capacitance
Applications
• Band switching up to 3 GHz
• Low loss band-switching in TV/VTR tuners
Parts Table
Part
BA892V-02V
Ordering code
Marking
BA892V-02V-GS08
A
Remarks
Tape and Reel
Package
SOD523
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test condition
Sub type
Symbol
VR
IF
Tj
Tstg
Value
35
100
150
-55 to
+150
Unit
V
mA
°C
°C
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction soldering point
Symbol
RthJS
Value
100
Unit
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
IR = 10 µA
Sub type Symbol
VR
Min
35
Typ. Max
Unit
V
Document Number 85640
Rev. 1, 26-Sep-02
www.vishay.com
1

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