(PDF) BA779S Datasheet - Silicon PIN Diodes

Número de pieza	BA779S
Descripción	Silicon PIN Diodes
Fabricantes	Vishay Telefunken
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No Preview Available ! Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz BA779.BA779S Vishay Telefunken Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage Forward current Junction temperature Storage temperature range Type Symbol VR IF Tj Tstg Value 30 50 125 –55...+125 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction ambient on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Forward voltage Reverse current Diode capacitance Differential forward re- sistance IF=20mA VR=30 V f=100MHz, VR=0 f=100MHz, IF=1.5mA Reverse impedance f=100MHz, VR=0 Minority carrier lifetime IF=10mA, IR=10mA Type BA779 BA779S Symbol Min Typ Max Unit VF 1 V IR 50 nA WCD 0.5 pF rf 50 zr 5 ztr 9 4 kW kW ms Document Number 85532 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 1 (4) 1 page

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PDF BA779S Data sheet ( Hoja de datos )