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PDF AA038P5-00 Data sheet ( Hoja de datos )

Número de pieza AA038P5-00
Descripción 37-39 GHz GaAs MMIC Power Amplifier
Fabricantes Alpha Industries 
Logotipo Alpha Industries Logotipo



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No Preview Available ! AA038P5-00 Hoja de datos, Descripción, Manual

37–39 GHz GaAs MMIC
Power Amplifier
Features
s Single Bias Supply Operation (5.5 V)
s 18 dB Typical Small Signal Gain
s 19 dBm Typical P1 dB Output Power
at 39 GHz
s 0.25 µm Ti/Pd/Au Gates
s 100% On-Wafer RF and DC Testing
s 100% Visual Inspection to MIL-STD-883
MT 2010
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB
associated gain over the band 37–39 GHz. The chip uses
Alpha’s proven 0.25 µm MESFET technology, and is
based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate an epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where power and gain are required.
Chip Outline
1.700
1.230
0.000
AA038P5-00
1.588
0.470
0.112
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
7 VDC
19 dBm
175°C
Electrical Specifications at 25°C (VDS = 5.5 V)
Parameter
Condition
Drain Current (at Saturation)
Small Signal Gain
F = 37–39 GHz
Input Return Loss
F = 37–39 GHz
Output Return Loss
F = 37–39 GHz
Output Power at 1 dB Gain Compression
F = 39 GHz
Saturated Output Power
F = 39 GHz
Gain at Saturation
Thermal Resistance1
F = 39 GHz
1. Calculated value based on measurement of discrete FET.
Symbol
IDS
G
RLI
RLO
P1 dB
PSAT
GSAT
ΘJC
Min.
16
16
19
Typ.
200
18
-13
-20
19
21
15
51
Max.
370
-10
-10
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email [email protected] www.alphaind.com
Specifications subject to change without notice. 8/00A
1

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