|
|
PDF AA035P3-00 Data sheet ( Hoja de datos )
| Número de pieza | AA035P3-00 | |
| Descripción | 31-35 GHz GaAs MMIC Driver Amplifier | |
| Fabricantes | Alpha Industries | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AA035P3-00 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
31–35 GHz GaAs MMIC
Driver Amplifier
Features
s Single Bias Supply Operation (5 V)
s 19 dB Typical Small Signal Gain
s 17 dBm Typical P1 dB Output Power
at 35 GHz
s 0.25 µm Ti/Pd/Au Gates
s 100% On-Wafer RF and DC Testing
s 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
1.905
0.000
AA035P3-00
1.250
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC driver amplifier has a typical P1 dB of 17 dBm with
18 dB associated gain at 35 GHz. The chip uses Alpha’s
proven 0.25 µm MESFET technology, which is based upon
MBE layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. The amplifier is a self-bias design requiring a
single positive drain bias to one of any three bonding sites.
All chips are screened for S-parameters prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where high gain and power are
required.
Electrical Specifications at 25°C (VDS = 5 V)
Parameter
Condition
Drain Current
Small Signal Gain
Noise Figure1
F= 31–35 GHz
F= 35 GHz
Input Return Loss
F= 31–35 GHz
Output Return Loss
F= 31–35 GHz
Output Power at 1 dB Gain Compression
F= 35 GHz
Saturated Output Power
Thermal Resistance2
F= 35 GHz
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
7 VDC
19 dBm
175°C
Symbol
IDS
G
NF
RLI
RLO
P1 dB
PSAT
ΘJC
Min.
15
15
16
Typ.3
275
19
10.5
-14
-16
17
19
66
Max.
350
-10
-10
Unit
mA
dB
dB
dB
dB
dBm
dBm
°C/W
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 1/01A
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet AA035P3-00.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AA035P3-00 | 31-35 GHz GaAs MMIC Driver Amplifier | Alpha Industries |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |