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PDF 1N23WE Data sheet ( Hoja de datos )
| Número de pieza | 1N23WE | |
| Descripción | SILICON MIXER DIODE | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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1N23WE
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WE is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
• High burnout resistance
• Low noise figure
• Hermetically sealed package
MAXIMUM RATINGS
IF 20 mA
VR
PDISS
TJ
TSTG
1.0 V
5.0 (ERGS) @ TC = 25 OC
-55 OC to +150 OC
-55 OC to +150 OC
PACKAGE STYLE DO- 23
NONE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
NF
F = 9375 MHz
RL = 100 Ω
Plo = 1.0 mW
IF = 30 MHz
NFif = 1.5 dB
VSWR
Z
IF
frange
RL = 22 Ω
f = 1000 Hz
MINIMUM TYPICAL
335
8.0
MAXIM
7.5
1.3
465
12.4
UNITS
dB
Ω
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
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