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PDF 1MBH75D-060 Data sheet ( Hoja de datos )
| Número de pieza | 1MBH75D-060 | |
| Descripción | Ratings and characteristics of Fuji IGBT | |
| Fabricantes | Fuji Electric | |
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1MBH75D-060S
Molded IGBT
600V / 75A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Item
Symbol
Rating
Collector-Emitter voltage
VCES
600
Gate-Emitter voltaga
VGES
±20
Collector DC
Tc=25°C
IC25
83
current
Tc=100°C IC100
75
1ms Tc=25°C Icp
225
Max. power dissipation (IGBT)
PC
310
Max. power dissipation (FWD)
PC
180
Operating temperature
Tj
+150
Storage temperature
Tstg -40 to +150
Screw torque
- 58.8 to 78.4
Unit
V
V
A
A
A
W
W
°C
°C
N·cm
Equivalent Circuit Schematic
IGBT + FWD
C:Collector
G:Gate
E:Emitter
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Symbol
Characteristics
Min.
Typ.
Max.
Zero gate voltage collector current ICES
– – 1.0
Gate-Emitter leakage current
IGES
– – 10
Gate-Emitter threshold voltage
VGE(th)
4.0 5.0 6.0
Collector-Emitter saturation voltage VCE(sat) – 2.4 2.9
Input capacitance
Cies
– 3700
–
Output capacitance
Coes
– 350
–
Reverse transfer capacitance
Cres
– 190
–
Turn-on time
ton *
– 0.15 –
tr * – 0.09 –
trr2 – 0.03 –
Turn-off time
toff
– 0.50 0.62
Switching
tf – 0.10 0.17
Time
Turn-on time
ton *
– 0.15 –
tr * – 0.09 –
trr2 – 0.03 –
Turn-off time
toff
– 0.50 0.62
tf – 0.10 0.17
FWD forward on voltage VF – 2.0 2.5
Reverse recovery time
trr – 0.06 0.10
*Turn-on characteristics include trr2. See a figure in next page.
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
––
––
Max.
0.40
0.69
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, IC=75A
VGE=0V
VCE=25V
f=1MHz
VCC=300V, IC=75A
VGE=±15V
RG=24 ohm
(Half Bridge)
Inductance Load
VCC=300V, IC=75A
VGE=+15V
RG=6 ohm
(Half Bridge)
Inductance Load
IF=75A, VGE=0V
IF=75A, VGE=-10V,
VR=300V, di/dt=100A/µs
Conditions
IGBT
FWD
Unit
mA
µA
V
V
pF
µs
µs
V
µs
Unit
°C/W
°C/W
1 page  
1MBH75D-060S
Characteristics
Reverse recovery time vs. Forward current
VR=300V, -di/dt=100A/µsec
IGBT Module
Reverse recovery current vs. Forward current
VR=300V, -di/dt=100A/µsec
Forward current : IF (Α)
Forward voltage vs. Forward current
Forward current : IF (Α)
Reverse recovery chracteristics vs. -di/dt
VR=300V, IF=75A, Tj=125°C
Forward Voltage : VF (V)
Transient thermal resistance
-di/dt [Α/µsec]
Pulse width : PW (sec)
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 1MBH75D-060.PDF ] | |
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