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Número de pieza | 1N4689 | |
Descripción | Silicon Epitaxial Planar Z-Diodes | |
Fabricantes | Vishay Telefunken | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1N4689 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Silicon Epitaxial Planar Z–Diodes
Features
D Zener voltage specified at 50 mA
D Maximum delta VZ given from 10 mA to 100 mA
D Very high stability
D Low noise
1N4678...1N4717
Vishay Telefunken
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=100mA
Type
Symbol
RthJA
Value
300
Unit
K/W
Symbol Min Typ Max Unit
VF 1.5 V
Document Number 85586
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
1 page 1N4678...1N4717
Vishay Telefunken
1000
tp/T=0.5
100
tp/T=0.2
10
tp/T=0.1
tp/T=0.02
tp/T=0.05
tp/T=0.01
1
10–1
100
95 9603
Figure 10. Thermal Response
Single Pulse
DRTth=JAT=jm3a0x0–KTa/Wmb
iZM=(–VZ+(VZ2+4rzj DT/Zthp)1/2)/(2rzj)
101
tp – Pulse Length ( ms )
102
Dimensions in mm
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
Cathode Identification
26 min.
3.9 max.
∅ 0.55 max.
26 min.
Document Number 85586
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
5 (6)
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 1N4689.PDF ] |
Número de pieza | Descripción | Fabricantes |
1N4680 | 500 mW AXIAL-LEADED ZENER DIODES | Microsemi Corporation |
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1N4680 | Silicon Epitaxial Planar Z-Diodes | Vishay Telefunken |
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