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PDF 1N4454 Data sheet ( Hoja de datos )
| Número de pieza | 1N4454 | |
| Descripción | High Conductance Ultra Fast Diode | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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1N4454
Discrete POWER & Signal
Technologies
DO-35
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
WIV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
50
200
400
600
1.0
4.0
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
1N4454
500
3.33
300
Units
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW/°C
°C/W
©1997 Fairchild Semiconductor Corporation
1 page | ||
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| PDF Descargar | [ Datasheet 1N4454.PDF ] | |
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