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Features
• Fast Switching Speed
• General Purpose Rectification
• Silicon Epitaxial Planar Construction
• Lead Free Finish, RoHS Compliant (Note 2)
1N4148 / 1N4448
FAST SWITCHING DIODE
Mechanical Data
• Case: DO-35
• Case Material: Glass
• Moisture Sensitivity: Level 1 per J-STD-020D
• Leads: Solderable per MIL-STD-202, Method 208
• Terminals: Finish ⎯ Sn96.5Ag3.5. Solderable per MIL-STD-
202, Method 208
• Polarity: Cathode Band
• Marking: Type Number
• Ordering Information: See Page 2
• Weight: 0.13 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0s
@ t = 1.0μs
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
1N4148
1N4448
100
75
53
300 500
150
1.0
2.0
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ , TSTG
Value
500
1.68
300
-65 to +175
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Total Capacitance
Reverse Recovery Time
1N4148
1N4448
1N4448
Symbol
VFM
IRM
CT
trr
Min
⎯
0.62
⎯
⎯
⎯
⎯
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
μA
μA
μA
nA
pF
ns
Test Condition
IF = 10mA
IF = 5.0mA
IF = 100mA
VR = 75V
VR = 70V, TJ = 150°C
VR = 20V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100Ω
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and high temperature solder exemptions applied where applicable,
see EU Directive Annex Notes 5 and 7.
1N4148 / 1N4448
Document number: DS12019 Rev. 7 - 2
1 of 2
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March 2008
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