|
|
PDF 1N4150UR-1 Data sheet ( Hoja de datos )
| Número de pieza | 1N4150UR-1 | |
| Descripción | MINI-MELF-SMD Silicon Diode | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 1N4150UR-1 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
|
No Preview Available !
MINI-MELF-SMD 1N4150UR-1
Silicon Diode
Applications
Switching
Used in general purpose applications, where a low current controlled
forward characteristic and fast switching speed are important.
BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
MIL-S-19500/ 231 with internal source control drawings.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating for
problem free solderability
Available in DO-35 package
UR Approval to Mil-S-19500/231
LL-34/35 M INI MELF
Surface Mount Package DO-213AA
0.10"R EF
2.54 m m R EF
L e n g th
0 .1 3 - 0 .1 4 6 "
3.30-3.70 m m
Both End Caps
0 .0 1 6 - .0 2 2 "
0.41-0.55 m m
D ia .
.063-.067"
1.6-1.7m m
Maximum Ratings
Symbol
Value
Unit
Peak Inverse Voltage
PIV
75 (Min.)
Volts
Average Rectified Current
IAvg
Continuous Forward Current
IFdc
Peak Surge Current (tpeak = 1 sec.)
BKC Power Dissipation TL=50 oC, L = 3/8" from body
Ipeak
Ptot
Operating Temperature Range
T
Op
Storage Temperature Range
TSt
Electrical Characteristics @ 25 oC
Symbol Minimum
200
400
0.5
500
-65 to +200
-65 to +200
Maximum
mAmps
mAmps
Amp
mWatts
oC
oC
Unit
Forward Voltage Drop @ IF = 1.0 mA
Forward Voltage Drop @ IF = 10 mA
Forward Voltage Drop @ IF = 50 mA
Forward Voltage Drop @ IF = 100 m
Forward Voltage Drop @ IF = 200 mA
Reverse Leakage Current @ V = 50 V
R
Breakdown Voltage @ Ir = 0.1 mA
VF
VF
VF
VF
VF
I
R
PIV
0.54
0.66
0.76
0.80
0.87
75
0.62
0.74
0.86
0.92
1.0
0.1 (100 @ 150 oC)
Volts
Volts
Volts
Volts
Volts
µA
Volts
Capacitance @ VR = 0 V, f = 1mHz
CT
2.5
Reverse Recovery time (note 1)
t
rr
4.0
Reverse Recovery time (note 2,3)
t
rr
6.0
Forward Recovery time (note 4)
Vfr
10
Note 1: Per Method 4031-A with IF = IR = 10 to 200 mA, RL = 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with IF = IR = 200 to 400 mA, RL = 100 Ohms,recover to 0.1 If.
Note 3: Per Method 4031-A with I = 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
F
Note 4: Per Method 4026 with IF = 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
pF
nSecs
nSecs
nSecs
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
MSC0960.PDF
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 1N4150UR-1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1N4150UR-1 | MINI-MELF-SMD Silicon Diode | Microsemi Corporation |
| 1N4150UR-1 | SWITCHING DIODE |  Compensated Deuices Incorporated |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |