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PDF 1N4150-1 Data sheet ( Hoja de datos )
| Número de pieza | 1N4150-1 | |
| Descripción | Silicon Switching Diode DO-35 Glass Package | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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1N4150-1
FEATURES
• 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-
19500/231
• SWITCHING DIODE
• METALLURGICALLY BONDED
• HERMETICALLY SEALED
• DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 1uS:
Surge Current B, sine 1S:
Total Power Dissipation:
Operating Current:
Derating Factor:
D.C. Reverse Voltage (VRWM):
-65°C to +175°C
-65°C to +175°C
4.0A
0.5A
500mW
200mA, TA= +25°C to +75°C
2mA/°C above TL (3/8”)= +75°C
50V
DC ELECTRICAL CHARACTERISTICS
VF IR
Ambient IF
(°C) mA
Min Max Ambient
Min Max Ambient
V V (°C) V (dc) µA µA (°C)
25 1 .54 .62 25 50 - 0.1 25
25 10 .66 .74 150 50 - 100
25 50 .76 .86
25 100 .82 .92
25 200 .87 1.00
VBR
IR Min Max
µA V V
10 75 -
DESIGN DATA
Case: Hermetically sealed glass package per MIL-
PRF-19500/231 DO-35 outline
Lead Material: Copper clad steel
Lead Finish: Tin/Lead
Thermal Resistance (RθJL): 250°C/W maximum
at L=.375”
Thermal Impedance (ZθJX): 70°C/W maximum
Marking: Alpha numeric.
Polarity: Cathode end is banded.
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol Min Max
Capacitance @ 0V
pF - 2.5
TRR @ IF =IR=10mA,
IRec = 1mA.
nsec
-
4
VFR @ IF= 200mA
V-5
TFR @ IF = 200mA
nsec -
10
WWW.MICROSEMI.COM
IRELAND - GORT ROAD, ENNIS, CO. CLARE
PHONE:
+353 65 6840044
TOLL FREE: +186 62 702434
FAX:
+353 65 6822298
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PHONE:
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TOLL FREE: 1 800 666 2999
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 1N4150-1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1N4150-1 | Silicon Switching Diode DO-35 Glass Package | Microsemi Corporation |
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| 1N4150-1 | Silicon Switching Diode |  MA-COM |
| 1N4150-1 | Diode Switching 75V 0.4A 2-Pin DO-35 |  New Jersey Semiconductor |
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