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PDF 1N4150 Data sheet ( Hoja de datos )

Número de pieza 1N4150
Descripción Silicon Switching Diode DO-35 Glass Package
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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No Preview Available ! 1N4150 Hoja de datos, Descripción, Manual

Silicon Switching Diode111NNN4oo1r r510
Applications
1N14N150-1
DO-35 Glass Package
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
DO-35 Glass Package
Lea dDia .
0 .0 18-0 .0 22"
0 .458-0 .558m m
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08- m m
Dia.
0.06-0.09"
1.53-2.28m m
Full approval to Mil-S-19500/231
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings
M a xim u m Ra ting s
Pea k Invers e Volta g e
Sym bol
PIV
Va lu e
75 (M in.)
Average Rectified Current
Continuous Forward Current
Peak Surge Current (tpeak = 1 sec.)
BKC Power Dissipation TL=50 oC, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Electrica l Cha ra cteris tics @ 25 oC
Sym bol
IAvg
IFdc
Ipeak
Ptot
TOp
TSt
M inim u m
200
400
0.5
500
-65 to +200
-65 to +200
M a xim u m
Forw a rd Volta g e Drop @ IF = 1.0 m A
Forw a rd Volta g e Drop @ IF = 10 m A
Forw a rd Volta g e Drop @ IF = 50 m A
Forw a rd Volta g e Drop @ IF = 10 0 m
Forw a rd Volta g e Drop @ IF = 20 0 m A
Revers e Lea k a g e Cu rrent @ VR = 50 V
Brea k dow n Volta g e @ Ir = 0 .1 m A
VF
VF
VF
VF
VF
Ir
PIV
0 .54 0 .62
0 .66 0 .74
0 .76 0 .86
0 .80 0 .92
0 .87 1.0
0 .1 (10 0 @ 150 oC)
75
Ca pa cita nce @ VR = 0 V, f = 1m Hz
Revers e Recovery tim e (note 1)
Revers e Recovery tim e (note 2,3)
Forw a rd Recovery tim e (note 4)
CT
trr
trr
V fr
2.5
4.0
6.0
10
Note 1: Per Method 4031-A with IF = IR = 10 to 200 mA, RL = 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with IF = IR = 200 to 400 mA, RL = 100 Ohms,recover to 0.1 If.
Note 3: Per Method 4031-A with I = 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
F
Note 4: Per Method 4026 with I = 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
F
U nit
Volts
mAmps
mAmps
Amp
mWatts
oC
oC
U nit
V o lts
V o lts
V o lts
V o lts
V o lts
µA
V o lts
pF
nS e c s
nS e c s
nS e c s
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135

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