DataSheet.es    


PDF BC875 Data sheet ( Hoja de datos )

Número de pieza BC875
Descripción NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



Hay una vista previa y un enlace de descarga de BC875 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! BC875 Hoja de datos, Descripción, Manual

NPN Silicon Darlington Transistors
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BC 876, BC 878
BC 880 (PNP)
BC 875
… BC 879
2
3
1
Type
Marking
BC 875
BC 877
BC 879
Maximum Ratings
Ordering Code
C62702-C853
C62702-C854
C62702-C855
Pin Configuration
123
ECB
Package1)
TO-92
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 90 ˚C2)
Junction temperature
Storage temperature range
Symbol
BC 875
VCE0
45
VCB0
60
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BC 877 BC 879
60 80
80 100
5
1
2
100
200
0.8 (1)
150
– 65 … + 150
Unit
V
A
mA
W
˚C
Thermal Resistance
Junction - ambient2)
Junction - case3)
Rth JA
Rth JC
156
75
K/W
1) For detailed information see chapter Package Outlines.
2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
383 5.91

1 page




BC875 pdf
PNP Silicon Darlington Transistors
q High current gain
q High collector current
q Low collector-emitter saturation voltage
q Complementary types: BC 875, BC 877,
BC 879 (NPN)
BC 876
… BC 880
2
3
1
Type
Marking
BC 876
BC 878
BC 880
Maximum Ratings
Ordering Code
C62702-C943
C62702-C942
C62702-C941
Pin Configuration
123
ECB
Package1)
TO-92
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 90 ˚C2)
Junction temperature
Storage temperature range
Symbol
BC 876
VCE0
45
VCB0
60
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BC 878 BC 880
60 80
80 100
5
1
2
100
200
0.8 (1)
150
– 65 … + 150
Unit
V
A
mA
W
˚C
Thermal Resistance
Junction - ambient2)
Junction - case3)
Rth JA
Rth JC
156
75
K/W
1) For detailed information see chapter Package Outlines.
2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
387 5.91

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet BC875.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BC875NPN Darlington transistorsNXP Semiconductors
NXP Semiconductors
BC875NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltageSiemens Semiconductor Group
Siemens Semiconductor Group
BC876PNP Silicon Darlington Transistors (High current gain High collector current)Siemens Semiconductor Group
Siemens Semiconductor Group
BC877NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltageSiemens Semiconductor Group
Siemens Semiconductor Group

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar